Gratulujemy profesorowi Andrzejowi Sikorze oraz innym współautorom opublikowania pracy "A novel highly conductive chalcogenide material: Cd1-xAlxSe thin films” wydanej w czasopiśmie Materials Letters (IF=3.42). Wszystkim życzymy dalszych sukcesów naukowych. 

A novel highly conductive chalcogenide material: Cd1-xAlxSe thin films

G.T. Chavan, A. Sikora, N.B. Chaure, L.P. Deshmukh, Chan-Wook Jeon

In the present report synthesis of Cd 1-x Al x Se thin films was done by chemical bath deposition. Our key attention was property engineering of CdSe material by Al- doping, which can be convenient in various high-tech optoelectronic applications. In this communication, structural, compositional, microstructural, and optoelectronic properties of Cd 1-x Al x Se (0 ≤ x ≤ 0.2) films have been presented. The crystallographic studies confirmed a hexagonal crystal structure of as-deposited Cd 1-x Al x Se films. Surface morphology revealed a transformation from globular grains to a cauliflower-like appearance. The topographical outcomes showed that surface roughness decreases at higher Al composition. The absorption coefficient (α) was high ≊ 105 cm -1 and the bandgap was improved from 1.8 to 2.05 eV. The electrical conductivity modulated up to 10 -5 (Ω cm) -1 and resistivity decreased with Al integration.

DOI10.1016/j.matlet.2022.132353